Press Resources > Press ReleaseProducts > SemiconductorsSamsung's new 256Gb V-NAND features industry's fastest data transfer speed, while being the first to apply the 'Toggle DDR 4.0' NAND interfaceSamsung Electronics, the world leader in advanced memory technology, today announced that it has begun mass producing its fifth-generation V-NAND memory chips with the fastest data transfers now available. The energy efficiency of Samsung's new V-NAND remains comparable to that of the 64-layer chip, primarily because the operating voltage has been reduced from 1.8 volts to 1.2 volts. Packed inside Samsung's fifth-generation V-NAND are more than 90 layers of '3D charge trap flash (CTF) cells,' the largest amount in the industry, stacked in a pyramid structure with microscopic channel holes vertically drilled throughout. This state-of-the-art memory fabrication is the result of several breakthroughs that include advanced circuit designs and new process technologies. "Samsung's fifth-generation V-NAND products and solutions will deliver the most advanced NAND in the rapidly growing premium memory market," said Kye Hyun Kyung, executive vice president of Flash Product and Technology at Samsung Electronics.
Samsung Electronics Announces Second Quarter 2018 Results
The mobile market condition will likely remain challenging in the second half amid pricing competition and new product launches. In the mobile market, despite concerns over a slowdown in smartphone growth, increase in memory content per device continued. In mobile, demand for high-density storage for new smartphones and high-end models is likely to remain robust. In mobile, demand growth is projected to continue, as the need for high-performance devices increases with the rise of high-density content. Samsung continued to expand sales of its premium products in the second quarter, including the Family Hub refrigerator and premium air purifier "CUBE".
Samsung Electronics Announces Industry's First 8Gb LPDDR5 DRAM for 5G and AI-powered Mobile Applications
as informed in Press Resources > Press ReleaseProducts > SemiconductorsSamsung Electronics, the world leader in advanced memory technology, today announced that it has successfully developed the industry's first 10-nanometer (nm) class* 8-gigabit (Gb) LPDDR5 DRAM. The newly-developed 8Gb LPDDR5 is the latest addition to Samsung's premium DRAM lineup, which includes 10nm-class 16Gb GDDR6 DRAM (in volume production since December 2017) and 16Gb DDR5 DRAM (developed in February). "This development of 8Gb LPDDR5 represents a major step forward for low-power mobile memory solutions," said Jinman Han, senior vice president of Memory Product Planning & Application Engineering at Samsung Electronics. The 8Gb LPDDR5 also makes use of a highly advanced, speed-optimized circuit architecture that verifies and ensures the chip's ultra-high-speed performance. Samsung, together with leading global chip vendors, has completed functional testing and validation of a prototype 8GB LPDDR5 DRAM package, which is comprised of eight 8Gb LPDDR5 chips.Samsung Electronics Wins at Two Top Global AI Machine Reading Comprehension Challenges
Corporate > Corporate OthersCorporate > TechnologySamsung Research, the advanced R&D hub of Samsung Electronics' SET (end-products) business, has ranked first in two of the world's top global artificial intelligence (AI) machine reading comprehension competitions. With intense competition in developing AI technologies globally, machine reading comprehension competitions such as MS MARCO are booming around the world. Machine reading comprehension is where an AI algorithm is tasked with analyzing data and finding an optimum answer to a query on its own accord. Samsung Research took part in the competitions with ConZNet, an AI algorithm developed by the company's AI Center. ** The Reinforcement Learning is the most advanced Machine Learning AI algorithm, and cutting-edge AI technologies including AlphaGo are upgrading machine intelligence by applying this technique.
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