as informed in CHIP FLOGGER SAMSUNG is this time mass producing what it is calling the "industry's first" second-generation of 10-nanometer class, 8-gigabit (Gb) DDR4 DRAM. "By emerging innovative technologies in DRAM circuit design and process, we have broken out of what has been a main barrier for DRAM scalability," told Samsung Electronics' president of Memory Business, Gyoyoung Jin in a statement. "Through a rapid ramp-up of the second-generation 10nm-class DRAM, we going to expand our overall 10nm-class DRAM produce further aggressively, in order to accommodate powerful market request and still to strengthen our business competitiveness." The new 10nm-class 8Gb DDR4 appeals to be not only thirty % further productive over the firm's 1st-generation 10nm-class 8Gb DDR4, however boast ten % best performance levels and 15 % best energy efficiency. "The new [chip] could operate at 3,600 megabits per 2nd (Mbps) per pin, compared to 3,200 Mbps of the company's 1x-nm 8Gb DDR4," the firm said.
Samsung this time mass producing 'industry's first' second-gen 10nm 8Gb DDR4 DRAM
collected by :Molly Tony
as informed in CHIP FLOGGER SAMSUNG is this time mass producing what it is calling the "industry's first" second-generation of 10-nanometer class, 8-gigabit (Gb) DDR4 DRAM. "By emerging innovative technologies in DRAM circuit design and process, we have broken out of what has been a main barrier for DRAM scalability," told Samsung Electronics' president of Memory Business, Gyoyoung Jin in a statement. "Through a rapid ramp-up of the second-generation 10nm-class DRAM, we going to expand our overall 10nm-class DRAM produce further aggressively, in order to accommodate powerful market request and still to strengthen our business competitiveness." The new 10nm-class 8Gb DDR4 appeals to be not only thirty % further productive over the firm's 1st-generation 10nm-class 8Gb DDR4, however boast ten % best performance levels and 15 % best energy efficiency. "The new [chip] could operate at 3,600 megabits per 2nd (Mbps) per pin, compared to 3,200 Mbps of the company's 1x-nm 8Gb DDR4," the firm said.
as informed in CHIP FLOGGER SAMSUNG is this time mass producing what it is calling the "industry's first" second-generation of 10-nanometer class, 8-gigabit (Gb) DDR4 DRAM. "By emerging innovative technologies in DRAM circuit design and process, we have broken out of what has been a main barrier for DRAM scalability," told Samsung Electronics' president of Memory Business, Gyoyoung Jin in a statement. "Through a rapid ramp-up of the second-generation 10nm-class DRAM, we going to expand our overall 10nm-class DRAM produce further aggressively, in order to accommodate powerful market request and still to strengthen our business competitiveness." The new 10nm-class 8Gb DDR4 appeals to be not only thirty % further productive over the firm's 1st-generation 10nm-class 8Gb DDR4, however boast ten % best performance levels and 15 % best energy efficiency. "The new [chip] could operate at 3,600 megabits per 2nd (Mbps) per pin, compared to 3,200 Mbps of the company's 1x-nm 8Gb DDR4," the firm said.
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